| Autor: |
Schubert, Ch., Kaiser, U., Hedler, A., Wesch, W., Gorelik, T., Glatzel, U., Kra¨ußlich, J., Wunderlich, B., Heß, G., Goetz, K. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2/1/2002, Vol. 91 Issue 3, p1520, 5p, 2 Black and White Photographs, 6 Graphs |
| Abstrakt: |
Ge nanocrystals were produced in 4H–SiC by implantation of 250 keV Ge[sup +] ions with a dose of 1×10[sup 16] cm[sup -2] and subsequent rapid thermal annealing at 1400–1600 °C. Radiation damage and Ge distribution after implantation and annealing were analyzed by Rutherford backscattering spectrometry, cross-sectional transmission electron microscopy methods, and x-ray diffraction. After ion implantation a significant amount of Ge is incorporated into the SiC lattice and Ge nanocrystallites were not found. Thermal annealing leads to a local Ge redistribution and both Ge-rich and Ge nanocrystals are detected after annealing. The size of the nanocrystals varies between 2 and 10 nm. © 2002 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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