Performance of AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistors with AlN gate insulator prepared by reactive magnetron sputtering.

Autor:	Stoklas, R., Gregusˇová, D., Gazˇi, Sˇ., Novák, J., Kordosˇ, P.
Předmět:	METAL insulator semiconductors HETEROSTRUCTURES FIELD-effect transistors ALUMINUM nitride GALLIUM nitride MAGNETRON sputtering NITROGEN ARGON
Zdroj:	Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics; Jan2011, Vol. 29 Issue 1, p01A809, 4p
Abstrakt:	The reactive magnetron sputtering technique at room temperature was used to prepare AlN dielectric layer for application in AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistors (MIS-HFETs). Two different gas ambiences (mixture of nitrogen and argon N2/Ar=0.35 and N2 alone, respectively) were applied. An increase in the saturation drain current (∼50%) and transconductance (∼45%) of the MIS-HFETs compared with HFET counterparts (IDS=363 mA/mm and gm=114 mS/mm) was observed. AlN/AlGaN/GaN MIS-HFET, where only the nitrogen gas ambience was used to deposit an AlN dielectric layer, reduced the gate leakage current up to four orders of magnitude (∼10-8 A/mm at -5 V) in comparison with the HFET. The improvements of the dynamic characteristics of the MIS-HFETs (reduction of the current collapse and density of the slow traps) were achieved. The N2 MIS-HFET exhibits better improvements of the static and dynamic parameters than the ArN2 MIS-HFET, and therefore the deposition of the AlN layer in the N2 alone is more effective. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
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