Growth of GaN/AlGaN on 200 mm diameter silicon (111) wafers by MOCVD.
| Autor: | Boyd, Adam R., Degroote, Stefan, Leys, Maarten, Schulte, Frank, Rockenfeller, Olaf, Luenenbuerger, Markus, Germain, Marianne, Kaeppeler, Johannes, Heuken, Michael |
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| Zdroj: | Physica Status Solidi (C); Jun2009 Supplement, Vol. 6, pS1045-S1048, 4p |
| Databáze: | Complementary Index |
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