Influence of total pressure and precursors flow rates on the growth of aluminium nitride by high temperature chemical vapor deposition (HTCVD).

Autor: Claudel, Arnaud, Blanquet, Elisabeth, Chaussende, Didier, Pique, Didier, Pons, Michel
Zdroj: Physica Status Solidi (C); Jun2009 Supplement, Vol. 6, pS348-S351, 4p
Databáze: Complementary Index
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