| Autor: |
Tringe, J., Nocerino, J., Tallon, R., Kemp, W., Shafarman, W., Marvin, D. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 1/1/2002, Vol. 91 Issue 1, p516, 3p, 1 Chart, 1 Graph |
| Abstrakt: |
Cu(In, Ga)Se[sub 2]/CdS/ZnO thin-film solar cells were exposed to doses up to 5×10[sup 8] rad(Si) of 50 keV x rays. Device performance consistently showed very little degradation, implying that previously observed radiation-induced performance reductions were likely the result of displacement damage. Subsequent experiments showed that cells recovered to near beginning-of-life performance with only short anneals under 50 °C. © 2002 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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