A EELS Sub Nanometer Investigation of the Dielectric Gate Stack for the Realization of InGaAs Based MOSFET Devices.

Autor: Longo, P, Holland, MC, Paterson, GW, Craven, AJ, Thayne, IG
Zdroj: Microscopy & Microanalysis; Jul2009 Supplement 2, Vol. 15 Issue S2, p454-455, 2p
Abstrakt: Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 – July 30, 2009 [ABSTRACT FROM PUBLISHER]
Databáze: Complementary Index