A EELS Sub Nanometer Investigation of the Dielectric Gate Stack for the Realization of InGaAs Based MOSFET Devices.
Autor: | Longo, P, Holland, MC, Paterson, GW, Craven, AJ, Thayne, IG |
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Zdroj: | Microscopy & Microanalysis; Jul2009 Supplement 2, Vol. 15 Issue S2, p454-455, 2p |
Abstrakt: | Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 – July 30, 2009 [ABSTRACT FROM PUBLISHER] |
Databáze: | Complementary Index |
Externí odkaz: |