| Autor: |
Spiegel, Y., Torregrosa, F., Etienne, H., Felch, S. B., Roux, L., Roux, P., Figarols, F., Grosjean, C., Poupinet, S., Regnier, P., Delalleau, J., Maillot, P., Pizzuto, O. |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; 1/7/2011, Vol. 1321 Issue 1, p150-153, 4p |
| Abstrakt: |
Plasma doping is a well-known technology used in semiconductor manufacturing for two major DRAM manufacturing steps: polysilicon counter-doping and contact doping. For these specific applications, the PULSION tool shows physical benefits, as well as cost of ownership benefits, with the capability to perform low energy, high dose implantation in a high throughput mode. Nevertheless, throughput is a common challenge for all semiconductor manufacturing, not only for advanced technologies. The purpose of this study is to demonstrate that plasma doping is not limited to advanced devices, but can also satisfy the requirements of >90 nm nodes, for specific applications such as Lightly Doped Drain (LDD) implants. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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