| Autor: |
Ferlet-Cavrois, V., Sturesson, F., Zadeh, A., Santin, G., Truscott, P., Poivey, C., Schwank, J. R., Peyre, D., Binois, C., Beutier, T., Luu, A., Poizat, M., Chaumont, G., Harboe-S?rensen, R., Bezerra, F., Ecoffet, R. |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Nuclear Science; 12/1/2010 Part 1, Vol. 57 Issue 6, p3515-3527, 13p |
| Abstrakt: |
Charge collection is used as a non-destructive technique to analyze the statistical response of vertical power MOSFETs and their single-event burnout (SEB) rate as a function of the incident ion energy. Two effects are observed at either low or high energy. At low energy, the collected charge significantly decreases because of the limited ion range and energy straggling in the thick epitaxial layer. Because of this limited range effect, using low energy ions for SEB testing can significantly underestimate the SEB rate. At high energy, the presence of thick source bond wires, which partially cover the die area, as typically encountered in power MOSFETs, induce a large shadowing effect. When crossing the bond wires, high energy ions loose energy and can have a higher LET (but still a significant range) when they reach the active die. As a result, they can deposit more charge in the thick sensitive epitaxial layers of the transistors than the primary beam. A significant probability of high collected charge events is then observed at high energy. Contrary to the low energy (range) effect, the shadowing at high energy contributes to overestimating the SEB rate. General rules for the SEB radiation hardness assurance, related to the ion energy versus the power MOSFET voltage rating, are provided to avoid both range and shadowing effects. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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