| Autor: |
Bordovsky, G. A., Marchenko, A. V., Seregin, P. P., Ali, H. M., Gladkikh, P. V., Kozhokar', M. Yu. |
| Zdroj: |
Glass Physics & Chemistry; Dec2010, Vol. 36 Issue 6, p652-656, 5p |
| Abstrakt: |
The Sn impurity atoms formed as a result of the radioactive transformation of the Sn parent atoms in the structure of glasses in the As-S and As-Se systems and the AsTe glass are involved in the glass composition in the form of Sn ions. The Sn impurity atoms formed after the radioactive decay of the Sb atoms in the structure of glasses in the As-S and As-Se systems are located in the arsenic sites and play the role of two-electron centers with a negative correlation energy. For the AsTe glass, the Sn atoms formed in a similar manner are electrically inactive. The larger part of the Sn daughter atoms, which are formed after the radioactive decay of the Te parent atoms in glasses of the As-S and As-Se systems and in the AsTe glass, are located in the chalcogen sites and are electrically inactive. The significant recoil energy of the daughter atoms in the case of decay of the Te atoms leads to the appearance of displaced Sn atoms. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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