| Autor: |
Zamudio-Flores, J. Alberto, Dahmani, Samir, Kompa, Günter |
| Zdroj: |
International Journal of Microwave & Wireless Technologies; 2010, Vol. 2 Issue 1, p63-73, 11p |
| Abstrakt: |
This work presents a measurement-based physics-oriented large-signal modeling technique for GaN HEMTs. All the model elements are derived directly from pulsed-DC measurements and bias dependent small-signal model elements. The proposed small-signal model features a 12-element extrinsic network, which allows proper modeling of the complex parasitic effects present in large gate-width devices. A reliable generally applicable extrinsic extraction algorithm is presented. It is based on pinch-off S-parameter measurements and on a scanning procedure to find the optimal capacitance distribution. Results of applying the algorithm with measured data of a GaN HEMT with gate width of 3.2-mm prove the consistency of the formulation. Successful model verification is shown under pulsed-DC, single- and two-tone operations, showing accurate predictions versus measurements of IDS, Pout, gain, harmonics and IMD products. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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