| Autor: |
Wei, S. Q., Oyanagi, H., Sakamoto, K., Takeda, Y., Pearsall, T. P. |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; 2001, Vol. 554 Issue 1, p483, 8p |
| Abstrakt: |
Local structure of (Ge[sub 4]Si[sub 4])[sub 5] monolayer strained-layer superlattice (MSLS) on Si(001) has been studied by fluorescence x-ray absorption fine structure (XAFS). The observed Ge-Ge and Ge-Si bond lengths, R[sub Ge-Ge] (2.42 Å) and R[sub Ge–Si] (2.38 Å), indicate that the the mismatch strain in (Ge[sub 4]Si[sub 4])[sub 5] MSLS is accommodated by both bond-compression and bond-bending in the (Ge[sub 4]) layer. The determined Si/Ge coordination number ratio for (Ge[sub 4]Si[sub 4])[sub 5] MSLS (N[sub Si]:N[sub Gc] = 2.2:1.8) deviate from that of an ideal interface model (N[sub Si]:N[sub Ge] = 1:3), which indicates a substantial interface mixing. A simple mechanism of intermixing via site-exchange and surface segregation is proposed. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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