| Autor: |
Doyle, B. L., Vizkelethy, G., Horn, K. M., Walsh, D. S., Dodd, P. E. |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; 2001, Vol. 576 Issue 1, p516, 6p |
| Abstrakt: |
Nuclear microscopy is usually associated with the use of highly focused MeV ions to measure microscopically the composition of solids. Another use of such focused ions emerged 10 years ago with the introduction of radiation effects microscopy or REM. With REM one exploits the charge deposited by each ion, or the effect of this charge. The power of this new technique stems from the reproducible, and very well understood, linear charge density produced by ions in semiconductors, coupled with the capability of a nuclear microprobe to provide individual ions to a specimen with high spatial resolution. Several techniques form the bases for REM, and these can be categorized under the headings: ion beam induced charge collection (IBICC) and single event effects (SEE) imaging, this paper reviews these techniques, and gives examples of their use in studying charge transport, and the effects of this transport, in semiconductors and integrated circuits. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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