| Autor: |
Amelichev, V., Saikin, D., Roshchin, V., Silibin, M. |
| Předmět: |
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| Zdroj: |
Semiconductors; Dec2010, Vol. 44 Issue 13, p1631-1633, 3p |
| Abstrakt: |
Results of simulation of stresses in the test structure of a silicon beam and analytical calculation of piezoelectric modulus d of a lead zirconate-titanate (PZT) thin film arranged in the region of an elastic element are presented. The characteristics of the sensitive element of acceleration are calculated based on a PZT thin film with an inertial mass made of silicon. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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