| Autor: |
Roze, K., Bannov, N.A., Kim, K.W., Holton, W.C., Littlejohn, M.A. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 5/1/1998, Vol. 83 Issue 9, p4988, 3p, 5 Graphs |
| Abstrakt: |
Presents a study to investigate hole impact ionization in p-Si for a range of electric fields up to 800 kV/cm and lattice temperatures between 77 and 450 K, utilizing a full-band Monte Carlo program for high energy carrier transport. Details on methodology used to conduct study; Indication of findings; Discussion on results. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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