Low-temperature photoluminescence study on Er-doped GaP grown by organometallic vapor phase epitaxy.
| Autor: | Fujiwara, Yasufumi, Curtis, Anthony P., Stillman, Gregory E., Matsubara, Naoteru, Takeda, Yoshikazu |
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| Zdroj: | Journal of Applied Physics; 5/1/1998, Vol. 83 Issue 9, p4902, 7p, 1 Diagram, 11 Graphs |
| Abstrakt: | Presents a study to investigate low-temperature photoluminescence on Er-doped GaP grown by organometallic vapor phase epitaxy. Methodology used to conduct study; Indication of findings; Discussion on results. |
| Databáze: | Complementary Index |
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