| Abstrakt: |
Local temperature rise Θ in focused-ion-beam (FIB) sample preparation has been calculated using a formalism for laser beam heating by Nissim et al. Typical calculations have been carried out for Si, GaAs, and SiO samples bombarded by the usual 30 keV FIBs. It is figured that an FIB-heated region is like a hemisphere with double the radius of the FIB, and the hemisphere closely follows the scanning FIB. Θ values of less than 100 K are predicted for Si and GaAs samples having their shapes of bulk, semi-bulk, and sheet (sustained with the substrate) under the usual FIB conditions of /=20 nA/μm at maximum. For SiO sample, on the other hand, the Θ values are larger by about 100 times than those for Si sample because of its low thermal conductivity and diflusivity of heat. As to a pillar-shaped sample, the Θ value is rather enhanced due to its poor heat conduction. [ABSTRACT FROM PUBLISHER] |
