| Autor: |
Ibáñez, J., Oliva, R., De la Mare, M., Schmidbauer, M., Hernández, S., Pellegrino, P., Scurr, D. J., Cuscó, R., Artús, L., Shafi, M., Mari, R. H., Henini, M., Zhuang, Q., Godenir, A., Krier, A. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; Nov2010, Vol. 108 Issue 10, p103504, 8p, 1 Chart, 7 Graphs |
| Abstrakt: |
We perform a structural and optical characterization of InAs1-xNx epilayers grown by molecular beam epitaxy on InAs substrates (x<=2.2%). High-resolution x-ray diffraction (HRXRD) is used to obtain information about the crystal quality and the strain state of the samples and to determine the N content of the films. The composition of two of the samples investigated is also obtained with time-of-flight secondary ion mass spectroscopy (ToF-SIMS) measurements. The combined analysis of the HRXRD and ToF-SIMS data suggests that the lattice parameter of InAsN might significantly deviate from Vegard's law. Raman scattering and far-infrared reflectivity measurements have been carried out to investigate the incorporation of N into the InAsN alloy. N-related local vibrational modes are detected in the samples with higher N content. The origin of the observed features is discussed. We study the compositional dependence of the room-temperature band gap energy of the InAsN alloy. For this purpose, photoluminescence and optical absorption measurements are presented. The results are analyzed in terms of the band-anticrossing (BAC) model. We find that the room-temperature coupling parameter for InAsN within the BAC model is CNM=2.0±0.1 eV. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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