| Autor: |
Ueng, H. J., Chen, N.-P., Janes, D. B., Webb, K. J., McInturff, D. T., Melloch, M. R. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; Dec2001, Vol. 90 Issue 11, p5637, 5p, 1 Diagram, 3 Graphs |
| Abstrakt: |
A study of nonalloyed ohmic contact structures consisting of Au/Ti metallization deposited on a thin (3.5–5 nm) layer of low-temperature-grown GaAs (LTG:GaAs) on a thin (10 nm) layer of heavily doped n-type GaAs is summarized. We demonstrate that this Au/Ti:LTG:GaAs/n[sup +]GaAs contact structure has a stable specific contact resistance between 40 and 300 K, with measured contact resistance as low as 2×10[sup -6] Ω cm[sup 2] at 40 K. Based on comparisons of the measured data with calculations using a uniformly doped Schottky model, we infer that the activation doping density in these structures is higher than 5×10[sup 18] cm[sup -3], and that the surface potential barrier height is lower than 0.7 eV (midgap). The characteristic current–voltage curves of the nonalloyed contact show that tunneling is the primary conduction mechanism. © 2001 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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