Polarization behavior of poly(vinylidene fluoride-trifluoroethylene) copolymer ferroelectric thin film capacitors for nonvolatile memory application in flexible electronics.

Autor: Mao, D., Mejia, I., Stiegler, H., Gnade, B. E., Quevedo-Lopez, M. A.
Předmět:
Zdroj: Journal of Applied Physics; Nov2010, Vol. 108 Issue 9, p094102, 6p, 2 Charts, 7 Graphs
Abstrakt: The time domain and electric field dependence of the polarization switching kinetics of poly(vinylidene fluoride-trifluoroethylene) copolymer based thin film metal-ferroelectric-metal capacitors have been characterized. At room temperature, the time required for complete switching polarization decreases from >1 s to <50 μs as the voltage is increased from 6 to 12 V, while low nonswitching polarization is maintained. In the time domain, the ferroelectric switching polarization reversal behavior for devices biased above the coercive field follows the nucleation-limited-switching model. The exponential relationship between switching time and applied electric field indicates nucleation dominated switching kinetics. Switching behavior as a function of temperature was also characterized from -60 to 100 °C in the voltage range of 6-12 V. Higher temperatures induce larger dc conductance leakage at low frequencies and increases nonswitching polarization for all the voltages studied. It is demonstrated that for certain frequencies, by controlling the switching voltage, our optimized ferroelectric thin film capacitor shows stable switching polarization in a temperature range compatible with flexible electronics applications. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index