| Autor: |
Zheng, X. J., Yu, G. C., Chen, Y. Q., Mao, S. X., Zhang, T. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; Nov2010, Vol. 108 Issue 9, p094305, 5p, 1 Diagram, 4 Graphs |
| Abstrakt: |
The photoinduced stiffening (PIS) and photoplastic effect (PPE) of ZnS individual nanobelt (NB) were observed by using a nanoindenter in conjunction with an incident ultraviolet (UV) light source system. The results show that the elastic modulus and hardness of ZnS individual NB under UV illumination are at least 32% and 20% larger than those in darkness. The mechanisms of PIS and PPE are interpreted by the increase in electronic strain and Peierls barrier due to the photogeneration of free carriers in ZnS individual NB. The research may offer useful guidelines to the application of optoelectronic devices based on individual nanostructures. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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