| Autor: |
Kim, J.-Y., Ko, B.-H., Choi, M.-K., Lee, S. |
| Předmět: |
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| Zdroj: |
Electronics Letters (Institution of Engineering & Technology); 11/11/2010, Vol. 46 Issue 23, p1566-1568, 3p, 1 Diagram, 3 Graphs |
| Abstrakt: |
The source/drain overlap and depletion length in deep-submicron RF multifinger MOSFETs is accurately determined by a new RF method based on the direct extraction of the extrinsic gate-bulk capacitance using S-parameters biased at VGS > VTH and VDS = 0V. This RF method is proposed to remove the serious error of a conventional C-V method due to the influence of the extrinsic capacitance. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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