| Autor: |
Elvira, D., Michon, A., Fain, B., Patriarche, G., Beaudoin, G., Robert-Philip, I., Vachtomin, Y., Divochiy, A. V., Smirnov, K. V., Gol'tsman, G. N., Sagnes, I., Beveratos, A. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 9/27/2010, Vol. 97 Issue 13, p131907, 3p |
| Abstrakt: |
By using superconducting single photon detectors, we perform time-resolved characterization of a small ensemble of InAsP/InP quantum dots grown by metal organic vapor phase epitaxy, emitting at wavelengths between 1.6 and 2.2 μm. We demonstrate that alloying phosphorus with InAs allows to shift the emission wavelength toward higher wavelengths, while keeping the high optical quality of these quantum dots at room temperature, with no decrease in their radiative lifetime. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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