| Autor: |
Oo, W. M. Hlaing, McCluskey, M. D., Huso, J., Morrison, J. L., Bergman, L., Engelhard, M. H., Saraf, L. V. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; Oct2010, Vol. 108 Issue 6, p064301, 3p, 1 Diagram, 4 Graphs |
| Abstrakt: |
Doping of semiconductor nanocrystals is an important problem in materials research. Using infrared and x-ray photoelectron spectroscopy, we have observed Cu acceptor dopants that were intentionally introduced into ZnO nanocrystals during growth. The incorporation of Cu2+ dopants increased as the average diameter of the nanocrystals was increased from ∼3 to 6 nm. Etching the nanocrystals with acetic acid revealed a core-shell structure, where a lightly doped core is surrounded by a heavily doped shell. These observations are consistent with the trapped dopant model, in which dopant atoms stick to the surface of the core and are overgrown by the nanocrystal material. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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