| Autor: |
Maohua Quan, Fengyun Guo, Meicheng Li, Liancheng Zhao |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; Oct2010, Vol. 108 Issue 6, p064508, 3p, 1 Black and White Photograph, 1 Diagram, 1 Graph |
| Abstrakt: |
The lattice structure of the InAs/Ga1-xInxSb interface has been studied in cross-section by high-resolution transmission electron microscopy. The atomic arrangement at the plane of the interface is analyzed based on the image characteristics. Possible bonding configurations are discussed. The results suggest that interface formation is first driven by charge balance. The shift in the interplanar separations associated with this modulation may lead to distortions of the interfacial structure of Ga1-xInxAs-like. The morphological evolution at GaAs-like interface is accompanied by interface misfit dislocations and compositional fluctuations near the interface associated with segregation. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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