| Autor: |
Schrag, B. D., Anguelouch, A., Xiao, Gang, Trouilloud, P., Lu, Yu, Gallagher, W. J., Parkin, S. S. P. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 5/1/2000, Vol. 87 Issue 9, p4682, 3p |
| Abstrakt: |
We have studied the switching properties of micron-scale magnetic tunnel junctions in two-dimensional magnetic fields. We present data on interlayer magnetic coupling for multiple samples. We interpret these data as the sum of a magnetostatic and a Ne´el coupling contribution. The data are presented as functions of layer structure. In addition, we have extracted information about interface roughness. We have also studied the area of switching critical curves as a function of device geometry. © 2000 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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