| Autor: |
Nongaillard, Matthieu, Lallemand, Florent, Allard, Bruno |
| Zdroj: |
IEEE Transactions on Device & Materials Reliability; Sep2010, Vol. 10 Issue 3, p396-402, 7p |
| Abstrakt: |
Given an existing manufacturing technology, the influence of the design parameters has been evaluated in order to improve the robustness of the 3-D capacitors. The objective is to select the capacitor patterns that provide a satisfying density with the required robustness with respect to the reliability indicators. The geometrical and manufacturing-related issues are both considered. The main manufacturing issues are the etching, deposition, and warpage of the wafer. The improvements have been observed experimentally for the robustness of the 3-D structures and the density of the capacitor which are increased for several proposed 3-D patterns. All capacitors tested in this paper are realized with PICS technology. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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