| Autor: |
Murdoch, S. J. T., Chapman, J. N., Pokhil, T. G., Mao, S., Murdock, E. S. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 5/1/2000, Vol. 87 Issue 9, p4945, 3p |
| Abstrakt: |
Transmission electron microscopy has been used to study the reversal of the free layer of a NiMn-pinned crossed-anisotropy spin valve as a function of applied field orientation and specimen temperature. By choosing the orientation of the applied field correctly it was possible to avoid the formation of domains in the reversal process. As the temperature was raised above room temperature, the mechanism remained qualitatively unchanged until temperatures of approx. 200 °C were reached, beyond which irreversible behavioral change began to take place. From analysis of image sequences magnetoresistance characteristics have been constructed. © 2000 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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