| Autor: |
Akiba, N., Chiba, D., Nakata, K., Matsukura, F., Ohno, Y., Ohno, H. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 5/1/2000, Vol. 87 Issue 9, p6436, 3p |
| Abstrakt: |
The spin-dependent scattering in ferromagnet/nonmagnet/ferromagnet (Ga,Mn)As/(Al,Ga)As/(Ga,Mn)As trilayer structures was studied. An increase of sheet resistance was observed when the magnetizations of the two ferromagnetic (Ga,Mn)As layers were aligned anti-parallel, which was realized by the different coercivity of the two (Ga,Mn)As layers with different compositions. This is the first demonstration of spin-dependent scattering in magnetic multilayer structures made of semiconductor-materials alone. © 2000 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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