| Autor: |
Liu, Congxiao, Yu, Chengtao, Jiang, Huaming, Shen, Liyong, Alexander, C., Mankey, G. J. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 5/1/2000, Vol. 87 Issue 9, p6644, 3p |
| Abstrakt: |
The effect of interface roughness on exchange bias for NiFe/FeMn bilayers is investigated for polycrystalline films and epitaxial films. Three different systems were investigated: polycrystalline Ta (10 nm)/Ni[sub 80]Fe[sub 20] (10nm)/Fe[sub 50]Mn[sub 50] (20 nm) films on oxygen plasma-etched Si(100) or Cu/H–Si(100) and epitaxial Ni[sub 80]Fe[sub 20] (10nm)/Fe[sub 60]Mn[sub 40] (20 nm) films on Cu/H–Si(110). For films grown on plasma-etched substrates, as the etching time is increased, film roughness increases up to 12 nm. For the polycrystalline films grown on ultrathin Cu underlayers, x-ray diffraction shows the fcc (111) texture is greatly reduced as the thickness is increased. The epitaxial Cu/Si(110) buffer layer induces fcc (111) epitaxial growth and modifies the interface morphology. The dependence of exchange bias on roughness for each set of samples is explained in terms of a competition between the interfacial exchange coupling and the af uniaxial anisotropy. © 2000 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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