| Autor: |
Myers-Ward, R. L., VanMil, B. L., Lew, K.-K., Klein, P. B., Glaser, E. R., Caldwell, J. D., Mastro, M. A., Wang, L., Zhao, P., Eddy Jr., C. R., Gaskill, D. K. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; Sep2010, Vol. 108 Issue 5, p054906-49066, 6p, 1 Color Photograph, 5 Graphs |
| Abstrakt: |
Intentionally doped n-type 4H-SiC films were grown on 4° and 8° off-axis substrates to investigate the influence of electron concentration on the incorporation of electron traps Z1/2 and EH6/7. No discernible change was seen in the Z1/2 and EH6/7 trap concentrations for films grown on both orientations with electron concentrations in the range of 1×1014 to 1×1016 cm-3, suggesting that the Z1/2 and EH6/7 traps are not associated with isolated carbon vacancies. The defect concentrations did not correlate with the measured carrier lifetimes, which is consistent with a carrier lifetime controlled by other recombination centers. Observed decreases in lifetime were related to increases in doping levels, with similar trends seen for both orientations. Carrier lifetimes in 8° material were slightly longer than in 4° films for similar doping concentrations, most likely being associated with surface recombination and/or extended defects. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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