| Autor: |
Strømme, M., Niklasson, G. A., Ritala, M., Leskela¨, M., Kukli, K. |
| Předmět: |
|
| Zdroj: |
Journal of Applied Physics; 11/1/2001, Vol. 90 Issue 9, p4532, 11p, 1 Chart, 11 Graphs |
| Abstrakt: |
Temperature dependent ac dielectric spectroscopy and room-temperature I–V characterization were performed on atomic layer deposited (Ta[sub 1-x]Nb[sub x])[sub 2]O[sub 5] films. The high frequency permittivity, as well as the dc conductivity of the films, were found to increase with increasing Nb content. The conduction mechanism in the mixed Ta–Nb oxide films was of the Poole–Frenkel type, while the high field conduction in pure Ta[sub 2]O[sub 5] was space-charge limited. The activation energy for dc conduction was higher in mixed Ta–Nb oxides compared to pure Ta[sub 2]O[sub 5] and Nb[sub 2]O[sub 5] films. Irreversible changes in the conduction mechanism took place upon heat treatment above a certain irreversibility temperature. This temperature was higher for the mixed oxides than for the binary ones. © 2001 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
