Electronic structure, diffusion, and p-doping at the Au/F[sub 16]CuPc interface.

Autor: Shen, Chongfei, Kahn, Antoine
Předmět:
Zdroj: Journal of Applied Physics; 11/1/2001, Vol. 90 Issue 9, p4549, 6p, 1 Chart, 6 Graphs
Abstrakt: Interfaces formed by evaporating Au on copper hexadecafluorophthalocyanine (F[sub 16]CuPc) and F[sub 16]CuPc on Au are studied via ultraviolet photoemission spectroscopy and x-ray photoemission spectroscopy. The energy position of the molecular levels is found to depend on the deposition sequence. The Au-on-F[sub 16]CuPc interface exhibits a lower hole injection barrier than the F[sub 16]CuPc-on-Au interface. This behavior is attributed to the diffusion of Au into the organic matrix at the Au-on-top interface, in which they behave as acceptors. Band bending consistent with p doping, i.e., upward away from the metal interface, is observed in Au-doped F[sub 16]CuPc films. Current–voltage measurements on Au/F[sub 16]CuPc/Au sandwich structures show a higher electron injection barrier at the top Au electrode contact than at the bottom electrode contact, also consistent with p-type doping F[sub 16]CuPc by Au. © 2001 American Institute of Physics. [ABSTRACT FROM AUTHOR]
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