| Autor: |
Selen, L. J. M., Janssen, F. J. J., van IJzendoorn, L. J., de Voigt, M. J. A., Theunissen, M. J. J., Smulders, P. J. M., Eijkemans, T. J. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 11/1/2001, Vol. 90 Issue 9, p4741, 7p, 3 Charts, 6 Graphs |
| Abstrakt: |
We have measured axially channeled Rutherford backscattering spectra of Si[sub 1-x]Ge[sub x] nanofilms in silicon(001). A step in the yield of the host crystal was found for off-normal axes at the depth of the nanofilm. The step was measured as a function of the angle between the incoming beam and the [011] axis and shows two maxima. It is found that Monte Carlo simulations assuming tetragonal distortion reproduce the experimental results. A universal curve was derived which enables determination of the tetragonal distortion from ion-channeling experiments, for a given film thickness. The results are compared with XRD measurements. © 2001 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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