| Autor: |
Lu, Y., Lépine, B., Jézéquel, G., Ababou, S., Alnot, M., Lambert, J., Renard, A., Mullet, M., Deranlot, C., Jaffrès, H., Petroff, F., George, J. -M. |
| Předmět: |
|
| Zdroj: |
Journal of Applied Physics; Sep2010, Vol. 108 Issue 4, p043703-37036, 6p, 1 Chart, 6 Graphs |
| Abstrakt: |
We have studied the boron (B) diffusion in MgO/CoFeB bilayer by x-ray photoelectron spectroscopy depth analysis. A large concentration of B (B/Mg=0.16) was found to diffuse into the MgO barrier after 350 °C annealing. The boron in MgO is in a highly oxidized B3+ state and is homogenously distributed in the whole barrier. The important B diffusion in MgO could be related to the CoFeB crystallization process which begins from the under CoFeB/Ru interface and pushes boron atoms to diffuse into the MgO barrier during annealing. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
