| Autor: |
Yom-Tov, N., Saguy, C., Bolker, A., Kalish, R., Yaish, Y. E. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; Sep2010, Vol. 108 Issue 4, p043711-37115, 5p, 7 Graphs |
| Abstrakt: |
Electrical properties of B-doped homoepitaxialy grown diamond are characterized with and without mesa structures by Hall effect measurements as function of temperature in the as-grown state and following oxygen reactive ion etching (RIE). The extracted carrier type, concentration, and mobility are found to depend on the measurement contact configuration. For measurements performed without mesa major differences, even in carrier type, are found following the RIE treatment, however no changes what so ever are observed when measuring with a mesa structure. Finite element simulation confirms that carrier concentration or/and mobility inhomogeneities in the regions surrounding the contacts in Hall effect measurements using the Van der Pauw configuration can result in wrong assignments of carrier type, concentration and mobility. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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