| Autor: |
Palshin, V., Tittsworth, R. C., Fountzoulas, C. G., Meletis, E. I. |
| Předmět: |
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| Zdroj: |
Journal of Materials Science; Apr2002, Vol. 37 Issue 8, p1535-1539, 5p |
| Abstrakt: |
Amorphous silicon-containing diamond-like carbon (Si-DLC) films were deposited on silicon wafers by Ar+ Ion Beam Assisted Deposition (IBAD) at various energy conditions. The films were examined with X-ray Absorption Near Edge Structure (XANES) spectroscopy and Extended X-ray Absorption Fine Structure (EXAFS) spectroscopy. The Si K-edge X-ray Absorption Spectroscopy (XAS) results indicate that Si-DLC films have an amorphous structure, where each Si atom is coordinated to four carbon atoms or CHn groups. This short-range order, where a Si atom is surrounded by four C atoms, was found in all Si-DLC films. The XANES spectra do not indicate Si coordination to oxygen atoms or phenyl rings, which are present in the precursor material. A structural model of Si-DLC is proposed based on XAS findings. Simulated X-ray absorption spectra of the model produced by FEFF8 show a good resemblance to the experimental data. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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