| Autor: |
Kirkpatrick, Allen, Harris, Daniel, Johnson, Linda |
| Předmět: |
|
| Zdroj: |
Journal of Materials Science; May2001, Vol. 36 Issue 9, p2195-2201, 7p |
| Abstrakt: |
Ion implantation with 11B+ or 28Si+ at 1000°C doubled the ring-on-ring flexure strength of c-plane sapphire disks tested at 300°C but had little effect on strength at 500 or 600°C. Disks were implanted on the tensile surface with 2 × 1017 B/cm2 (half at 40 keV and half at 160 keV) or 1 × 1017 Si/cm2 (80 keV). Sapphire implanted with 1 × 1018 B/cm2 had only half as much flexure strength at 300° or 500°C as sapphire implanted with 2 × 1017 B/cm2. Implantation with B, Si, N, Fe or Cr had no effect on the c-axis compressive strength of sapphire at 600°C. Boron ion implantation (2 × 1017 B/cm2, half at 40 keV and half at 160 keV) induced a compressive surface force per unit length of 1.9 × 102 N/m at 20° and 1.4 × 102 N/m at 600°C. The infrared emittance at 550–800° of B-implanted sapphire at a wavelength of 5 μm increased by 10–15% over that of unimplanted sapphire. Infrared transmittance of sapphire implanted with B, Si or N at either 1000°C or 25°C is within ∼1–3% of that of unimplanted material at 3.3 μm. Implantation with Fe or Cr at 25°C decreases the transmittance by 4–8% at 3.3 μm, but implantation at 1000°C decreased transmittance by only 2–4% compared to unimplanted material. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
Full text from SpringerLink