| Autor: |
K. Takagi, S. Shirai, Y. Tatsuoka, C. Watatani, T. Ota, T. Takiguchi, T. Aoyagi, T. Nishimura, N. Tomita |
| Zdroj: |
IEEE Photonics Technology Letters; Nov2004, Vol. 16 Issue 11, p2415-2417, 3p |
| Abstrakt: |
A 1.3-μm AlGaInAs multiquantum well ridge waveguide distributed feedback laser diode was developed. By forming n-InGaAsP grating in the n-InP cladding layer close to the active region, accumulation of the holes in the grating layer was reduced and over 5 mW of output power was obtained at 120°C. Clear eye opening was confirmed with no mask hits for OC-192 under 10-Gb/s direct modulation at the temperature up to 120°C. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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