| Autor: |
Johnson, R.W., Cai Wang, Yi Liu, Scofield, J.D. |
| Zdroj: |
IEEE Transactions on Electronics Packaging Manufacturing; Jul2007, Vol. 30 Issue 3, p182-193, 12p |
| Abstrakt: |
Silicon carbide is a wide-bandgap semiconductor capable of operation at temperatures in excess of 300degC. However, high-temperature packaging to interface with the other elements of the electrical system is required. Die attach, wire bonding, and passivation materials and techniques have been demonstrated for use at 300degC. Transient liquid phase bonding has been developed with Au:Sn/Au, yielding high die shear strength after 2000 h at 400degC. Large diameter (250 mum) gold and platinum wire bonding was evaluated for top side electrical contact. Au wire was reliable after 2000 h at 300degC with Ti/Ti:W/Au pads over passivation on the SiC. However, Au wire on Ti/Pt/Au and Pt wire on both Ti/Tl:W/Au and Ti/Pt/Au exhibited passivation fracture with aging. Polyimide has been demonstrated for 2000 h at 300degC in air as a high-voltage passivation layer. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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