| Autor: |
Cannon, E.H., KleinOsowski, A., Kanj, R., Reinhardt, D.D., Joshi, R.V. |
| Zdroj: |
IEEE Transactions on Device & Materials Reliability; Mar2008, Vol. 8 Issue 1, p145-152, 8p |
| Abstrakt: |
This paper describes modeling and hardware results of how the soft-error rate (SER) of a 65-nm silicon-on-insulator SRAM memory cell changes over time, as semiconductor aging effects shift the SRAM cell behavior. This paper also describes how the SER changes in the presence of systematic and random manufacturing variation. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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