| Autor: |
Ruat, M., Angers, R., Pakfar, A., Ghibaudo, G., Chantre, A., Revil, N., Pananakakis, G. |
| Zdroj: |
IEEE Transactions on Device & Materials Reliability; Jun2006, Vol. 6 Issue 2, p154-162, 9p |
| Abstrakt: |
A new degradation behavior for heterojunction bipolar transistors under reverse base-emitter junction stress is presented and discussed. Hot carrier injection triggered a correlated decrease of both the base and collector-currents in the first stress-time steps. Both experiments and simulations show that this degradation is linked to the stress-induced suppression of initially present excess ideal components for both currents [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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