| Autor: |
Mergens, M.P.J., Russ, C.C., Verhaege, K.G., Armer, J., Jozwiak, P.C., Mohn, R.P., Keppens, B., Trinh, C.S. |
| Zdroj: |
IEEE Transactions on Device & Materials Reliability; Sep2005, Vol. 5 Issue 3, p532-542, 11p |
| Abstrakt: |
A novel diode-triggered silicon-controlled rectifier (DTSCR) (Mergens et al., 2003) electrostatic discharge (ESD) protection element is introduced for low-voltage application (signal and supply voltages ≤ 1.8 V) with extremely narrow ESD design margins. Trigger-voltage engineering in conjunction with fast and efficient SCR voltage clamping is applied for the protection of ultrasensitive circuit nodes, such as SiGe heterojunction bipolar transistor (HBT) base regions (e.g., fTmax=45 GHz in BiCMOS 0.35-μm LNA input) and thin gate oxides (e.g., tox=1.7 nm in CMOS 0.09-μm high-speed input). Ultrathin gate protection requires a reinforced trigger diode chain to avoid SCR trigger-speed issues resulting in critical trigger-voltage overshoots for very fast ESD transients such as a charged device model (CDM). SCR integration can be realized based on parasitic n-p-n/p-n-p inherent to CMOS devices or can alternatively be implemented based on vertical high-speed SiGe HBT with adjacent p+ SCR anode. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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