On single-electron technology full adders.

Autor: Sulieman, M.H., Beiu, V.
Zdroj: IEEE Transactions on Nanotechnology; Nov2005, Vol. 4 Issue 6, p669-680, 12p
Abstrakt: This paper reviews several full adder (FA) designs in single-electron technology (SET). In addition to the structure and size (i.e., number of devices), this paper tries to provide a quantitative and qualitative comparison in terms of delay, sensitivity to (process) variations, and complexity of the design. This will allow for a better understanding of the advantages and disadvantages of each solution. An optimization of an SET FA (combining one of the SET FAs with a static buffer), together with a new SET FA design (based on capacitive SET threshold logic gates), will also be described and compared with the other SET FAs. [ABSTRACT FROM PUBLISHER]
Databáze: Complementary Index