| Autor: |
Schulman, J.N., Kolinko, V., Morgan, M., Martin, C., Lovberg, J., Thomas, S., III, Zinck, J., Boegeman, Y.K. |
| Zdroj: |
IEEE Microwave & Wireless Components Letters; Jul2004, Vol. 14 Issue 7, p316-318, 3p |
| Abstrakt: |
W-band direct detection circuits have been designed and fabricated for use in a passive millimeter wave camera. The circuits are based on the recently developed Sb-heterostructure diode. We measure record voltage responsivities in test circuits, up to 8,000 mV/mW from 75 to 93 GHz, with input power from -50 to -30 dBm. Performance was similar in an actual camera frequency processor board with 128 tuned channels. 72% of detectors showed responsivity at or above 6,000 mV/mW and 3% of channels were above 10,000 mV/mW. Since tens of thousands of Sb-heterostructure diodes can be reproducibly and inexpensively fabricated, this demonstrates for the first time the feasibility of large-scale detector arrays utilizing zero bias direct detection circuitry. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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