| Autor: |
Balmer, R.S., Heaton, J.M., Maclean, J.O., Ayling, S.G., Newey, J.P., Houlton, M., Calcott, P.D.J., Wight, D.R., Martin, T. |
| Zdroj: |
Journal of Lightwave Technology; Jan2003, Vol. 21 Issue 1, p211-217, 7p |
| Abstrakt: |
Next-generation optical-communications systems require on-wafer integration of active and passive opto-electronic components to increase operating speed and reduce packaging costs. Increased coupling efficiencies between semiconductor waveguides and optical fibers are of particular interest. A simple and cost-effective method of fabricating a mode-size converter monolithically integrated with a semiconductor waveguide is presented. An on-wafer mode-size converter reduces the number of interfaces in an opto-electronic circuit and improves the coupling efficiency between semiconductor waveguide and optical fiber. Vertically tapered epilayers are deposited in a single epitaxial growth run using shadow-masked growth by chemical-beam epitaxy, avoiding complex and expensive processing and regrowth stages. Waveguides that taper vertically and horizontally over ∼1 mm for gradual expansion of the mode size are demonstrated. Waveguide loss measurements showed that there was negligible loss across the tapered regions. A loss of <2 dB/interface was achieved compared with ∼8 dB/interface for a butt-coupled discrete device. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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