| Autor: |
Won-Jin Choi, Bond, A.E., Jongwoo Kim, Jiaming Zhang, Jambunathan, R., Foulk, H., O'Brien, S., Van Norman, J., Vandegrift, D., Wanamaker, C., Shakespeare, J., He Cao |
| Zdroj: |
Journal of Lightwave Technology; Dec2002, Vol. 20 Issue 12, p2052-2056, 5p |
| Abstrakt: |
We present a metal-organic-chemical-vapor-deposition-grown low-optical-insertion-loss InGaAsP/InP multiple-quantum-well electroabsorption modulator (EAM), suitable for both nonreturn-to-zero (NRZ) and return-to-zero (RZ) applications. The EAM exhibits a dynamic (RF) extinction ratio of 11.5 dB at 1550 nm for 3 Vp-p drive under 40-Gb/s modulation. The optical insertion loss of the modulator in the on-state is -5.2 dB at 1550 nm. In addition, the EAM also exhibits a 3-dB small-signal response (S21) of greater than 38 GHz, allowing it to be used in both 40-Gb/s NRZ and 10-Gb/s RZ applications. The dispersion penalty at 40 Gb/s is measured to be 1.2 dB over ±40 ps/nm of chromatic dispersion. Finally, we demonstrate 40-Gb/s transmission performance over 85 km and 700 km. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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