| Autor: |
Strassburg, M., Schulz, O., Pohl, U.W., Bimberg, D., Itoh, S., Nakano, K., Ishibashi, A., Klude, M., Hommel, D. |
| Zdroj: |
IEEE Journal of Selected Topics in Quantum Electronics; Mar/Apr2001, Vol. 7 Issue 2, p371-375, 5p |
| Abstrakt: |
New concepts to improve the performance of green-emitting laser diodes, based on the ZnSe system, are presented. The benefits of implantation-induced disordering (IID) and a novel alleged contact structure are discussed. Using IID, index-guided lasers with low thresholds are fabricated. The introduction of Li3N-containing contacts leads to an acceptor indiffusion resulting in an increased p-type doping level and thereby extremely reduced turn-on voltages, threshold current densities, increased wall-plug efficiencies, and extended continuous-wave lifetimes [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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