| Autor: |
Eliseev, P.G., Li, H., Liu, T., Newell, T.C., Lester, L.F., Malloy, K.J. |
| Zdroj: |
IEEE Journal of Selected Topics in Quantum Electronics; Mar/Apr2001, Vol. 7 Issue 2, p135-142, 8p |
| Abstrakt: |
Emission spectra and modal optical gain are investigated in ultralow-threshold MBE-grown InAs-InGaAs quantum dot (QD) structures. The record lowest room-temperature inversion current is found to be ~13 A cm-2. The rate-equation model is proposed describing the optical gain related to the ground-state (GS) transitions in QDs. The ground-state gain goes to the maximum value that corresponds to the total inversion of available levels. The gain cross section for the GS emission is estimated as ~7×10-15 cm2 [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
