1.1-/spl mu/m-range InGaAs VCSELs for high-speed optical interconnections.

Autor: Suzuki, N., Hatakeyama, H., Tokutome, K., Fukatsu, K., Yamada, M., Anan, T., Tsuji, M.
Zdroj: IEEE Photonics Technology Letters; 6/15/2006, Vol. 18 Issue 12, p1368-1370, 3p
Abstrakt: We have developed vertical-cavity surface-emitting lasers for optical interconnections operating at 1.07 mum. The active layers of the devices are InGaAs-GaAs multiple quantum-wells, which are suitable for high-speed operation and high reliability. The devices exhibit -3-dB modulation bandwidths up to 19 GHz and no degradation under 70degC, 1000-h automatic power control tests. Error-free 20-Gb/s operations were also achieved [ABSTRACT FROM PUBLISHER]
Databáze: Complementary Index