| Autor: |
L.M. Augustin, E. Smalbrugge, K.D. Choquette, F. Karouta, R.C. Strijbos, G. Verschaffelt, E.-J. Geluk, T.G. van de Roer, H. Thienpont |
| Zdroj: |
IEEE Photonics Technology Letters; Mar2004, Vol. 16 Issue 3, p708-710, 3p |
| Abstrakt: |
We have investigated the potential of asymmetric current injection for polarization switching in GaAs-based intracavity contacted vertical-cavity surface-emitting lasers using two sets of p- and n-type contacts per device. When using the contacts aligned along the [11~0] crystal direction, the observed laser polarization is parallel to [110], whereas, using the contacts along the [110] crystal direction, the polarization of the laser emission switches to a direction making an angle of 25°-90° towards [110]. To overcome this peculiar result, a careful design of the contact layers in the intracavity structure is required. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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